| PART |
Description |
Maker |
| NTMFS08N2D5C |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
| FDMS86252L |
150V N-Channel Shielded Gate PowerTrenchMOSFET
|
Fairchild Semiconductor
|
| FDC8601 |
N-Channel Shielded Gate PowerTrench MOSFET
|
Fairchild Semiconductor
|
| STL8NH3LL |
N-CHANNEL 30 V - 0.012 з - 8 A PowerFLATULTRA LOW GATE CHARGE STripFETMOSFET N沟道30 0.012з - 8甲的PowerFLAT⑩超低栅极电荷STripFET⑩MOSFET
N-CHANNEL 30 V - 0.012 з - 8 A PowerFLAT⑩ ULTRA LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL MOSFET
N-CHANNEL 30 V - 0.012 ?- 8 A PowerFLAT ULTRA LOW GATE CHARGE STripFET MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STS12NH3LL |
N-CHANNEL 30V - 0.008 Ohm - 12A SO-8 ULTRA LOW GATE CHARGE STripFET™ MOSFET
N-CHANNEL 30 V - 0.008 ?- 12 A SO-8 ULTRA LOW GATE CHARGE STripFET MOSFET
N-CHANNEL PowerMESH MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFETMOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW12N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| SDR0602-181KL SDR0602-390KL SDR0602-820KL SDR0602- |
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 47 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 120 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 68 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 4.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 390 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 2.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 3.9 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Power Inductor; Series:SDR0602; Inductance:100uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:7MHz; Package/Case:470; Terminal Type:PCB Surface Mount; Core Material:Ferrite DQ; Current Rating:0.32A
|
Bourns, Inc.
BOURNS INC
|
| 558-1192 558-1192-09-00-00 558-1192-11-00-00 558-1 |
Variable Coil, Shielded, Vertical, .080μH thru 1.20mΗ
SHIELDED, 1.8 uH - 2.7 uH, VARIABLE INDUCTOR
SHIELDED, 3.9 uH - 5.6 uH, VARIABLE INDUCTOR
SHIELDED, 0.39 uH - 0.56 uH, VARIABLE INDUCTOR
|
CAMBION Electronic Components
WEARNES CAMBION LTD
|
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